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 VISHAY
BY203/..S
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
\
Features
* Glass passivated junction * Hermetically sealed package
Applications
Fast rectification and switching avalanche sinterglass diode for TV-line output circuits and switch mode power supply
Mechanical Data
Case: Sintered glass case, SOD 57 Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any
949539
Weight: 370 mg, (max. 500 mg)
Parts Table
Part BY203-12S BY203-16S BY203-20S Type differentiation VR = 1200 V; IFAV = 250 mA VR = 1600 V; IFAV = 250 mA VR = 2000 V; IFAV = 250 mA SOD57 SOD57 SOD57 Package
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage IR = 100 A IR = 100 A IR = 100 A Average forward current Peak forward surge current Junction temperature range Storage temperature range Non repetitive reverse avalanche energy I(BR)R = 0.4 A tp = 10 ms half sinewave Test condition Sub type BY20312S BY20316S BY20320S Symbol VR = VRRM VR = VRRM VR = VRRM IFAV IFSM Tj Tstg ER Value 1200 1600 2000 250 20 -55 to +150 -55 to +175 10 Unit V V V mA A C C mJ
Maximum Thermal Resistance
Tamb = 25 C, unless otherwise specified Parameter Junction ambient Test condition l = 10 mm, TL = constant maximum lead length Sub type Symbol RthJA RthJA Value 45 100 Unit K/W K/W
Document Number 86002 Rev. 5, 07-Jan-03
www.vishay.com 1
BY203/..S
Vishay Semiconductors Electrical Characteristics
Tamb = 25 C, unless otherwise specified Parameter Forward voltage Reverse current Test condition IF = 200 mA, tp/T = 0.01, tp = 0.3 ms VR = 700 V VR = 1000 V VR = 1200 V Breakdown voltage BY203-12S BY203-16S BY203-20S Sub type Symbol VF IR IR IR V(BR) V(BR) V(BR) trr 1200 1600 2000 Min Typ.
VISHAY
Max 2.4 2 2 2
Unit V A A A V V V
IR = 100 A, tp/T = 0.01, tp = 0.3 ms BY203-12S IR = 100 A, tp/T = 0.01, tp = 0.3 ms BY203-16S IR = 100 A, tp/T = 0.01, tp = 0.3 ms BY203-20S
Reverse recovery time
IF = 0.5 A, IR = 1 A, iR = 0.25 A
300
ns
Typical Characteristics (Tamb = 25 C unless otherwise specified)
240
T j - Junction Temperature ( C )
0.30
200 160 120 80 BY203/12 40 BY203/16 0 BY203/20
I FAV - Average Forward Current ( A )
0.25 0.20 0.15 0.10 0.05 0.00 VR=VRRM half sinewave 0
RthJA=45K/W l=10mm
VRRM VR
RthJA=100K/W PCB: d=25mm
94 9080
1600 0 400 800 1200 VR,VRRM - Reverse / Repetitive Peak Reverse Voltage ( V )
16398
30 60 90 120 Tamb - Ambient Temperature ( C )
150
Figure 1. Junction Temperature vs. Reverse/Repetitive Peak Reverse Voltage
Figure 3. Max. Average Forward Current vs. Ambient Temperature
10.000
1000 VR = VRRM
I F - Forward Current ( A)
1.000 Tj=175C Tj=25C
IR - Reverse Current ( mA )
100
0.100
10
0.010
0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
16397
1 25
16399
50
75
100
125
150
VF - Forward Voltage ( V )
Tj - Junction Temperature ( C )
Figure 2. Forward Current vs. Forward Voltage
Figure 4. Reverse Current vs. Junction Temperature
www.vishay.com 2
Document Number 86002 Rev. 5, 07-Jan-03
VISHAY
BY203/..S
Vishay Semiconductors
PR - Reverse Power Dissipation ( mW )
500 VR = VRRM 400 300 200 100 0 25 PR-Limit @100%VR PR-Limit @80%VR
CD - Diode Capacitance ( pF )
18 16 14 12 10 8 6 4 2 0 50 75 100 125 Tj - Junction Temperature ( C ) 150
16401
f=1MHz
0.1
16400
1.0 10.0 VR - Reverse Voltage ( V )
100.0
Figure 5. Max. Reverse Power Dissipation vs. Junction Temperature
Figure 6. Diode Capacitance vs. Reverse Voltage
Package Dimensions in mm
3.6 max. Sintered Glass Case SOD 57 Weight max. 0.5g Cathode Identification
technical drawings according to DIN specifications 94 9538
0.82 max.
26 min.
4.2 max.
26 min.
Document Number 86002 Rev. 5, 07-Jan-03
www.vishay.com 3
BY203/..S
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com 4
Document Number 86002 Rev. 5, 07-Jan-03


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